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    • 专利摘要:
    The invention relates to an optoelectronic device (1) comprising light-emitting diodes made of a material mainly comprising the same semiconductor compound and arranged so that: a plurality of N light-emitting diodes (40), N> 2, are connected in series and able to be polarized live; at least one light-emitting diode (50) is connected in parallel to the plurality of N light-emitting diodes (40) and is capable of being polarized in reverse, thus forming a Zener diode; the number N of said series-connected light-emitting diodes (40) being adapted so that the sum of the N threshold voltages (Vs) is less than the breakdown voltage (Vc) of the Zener diode.
    公开号:FR3044167A1
    申请号:FR1561195
    申请日:2015-11-20
    公开日:2017-05-26
    发明作者:Hubert Bono；Ivan-Christophe Robin
    申请人:Commissariat a lEnergie Atomique CEA；Commissariat a lEnergie Atomique et aux Energies Alternatives CEA；
    IPC主号:
    专利说明:

    OPTOELECTRONIC DEVICE WITH ELECTROLUMINESCENT DIODES COMPRISING
    LESS ZENER DIODE
    TECHNICAL AREA
    The field of the invention is that of ESD type protection (for Electrostatic Discharge, in English) of optoelectronic devices, and in particular optoelectronic devices with light-emitting diodes.
    STATE OF THE PRIOR ART
    Optoelectronic devices with light-emitting diodes are known, these being generally formed of a stack of semiconductor layers adapted to emit light radiation, for example blue or ultraviolet, or even green or red. The semiconductor layers are usually made of a material comprising for the most part a semiconductor compound, for example III-V, that is to say comprising elements of column III and column V of the periodic table, such as a compound III. N, for example gallium nitride (GaN), indium gallium nitride (InGaN) or aluminum gallium nitride (AIGaN).
    The fact of connecting in series a plurality of light-emitting diodes makes it possible to obtain a higher operating voltage than the unit operating voltage of each of the diodes, thus limiting the necessity of resorting to electronic elements (capacitors, converters). .) ensuring the adaptation of the supply voltage eg from the mains (for example 320V peak voltage for an AC voltage of 230V) to the unit operating voltage of the diodes (usually of the order of 3V).
    It is important to ensure the protection of each of the light-emitting diodes connected in series with voltages of abnormally high intensity, such as electrostatic discharge, which are liable to cause irreversible structural degradation of the light-emitting diodes.
    One solution generally consists in connecting a Zener diode in parallel with each of the light emitting diodes, or even a pair of Zener diodes connected in head to tail. Indeed, the Zener diodes have a reverse voltage called breakdown from which they pass from a blocked state in which the electric current does not circulate substantially in a conducting state having a very low electrical resistance. Also, when an abnormally high voltage is experienced by the light emitting diodes, Zener diodes go from the off state to the on state so that the electric current flows substantially through them, thus preserving the light emitting diodes. a potential irreversible structural degradation.
    Usually, light-emitting diodes made based on a III-V compound, such as GaN, whose threshold voltage is of the order of 3V, are associated with Zener diodes made of silicon whose breakdown voltage is of the order of 5V.
    The document US2011 / 0057569 describes an example of an optoelectronic device comprising a plurality of light-emitting diodes connected in series and made on the basis of GaN, where each of the light-emitting diodes is connected in parallel with a Zener diode made from silicon, the Zener diodes being formed in the same silicon substrate.
    However, there is a need for an optoelectronic device, having a simplified structure, comprising a plurality of light-emitting diodes connected in series, each of which is protected against electrostatic discharges or equivalent voltages. There is also a need for an optoelectronic device having a monolithic structure which allows a high density of light-emitting diodes.
    DISCLOSURE OF THE INVENTION The object of the invention is to remedy at least in part the drawbacks of the prior art, and more particularly to propose an optoelectronic device comprising light-emitting diodes each having a so-called threshold direct voltage and an inverse voltage of breakdown, made of a material predominantly comprising the same semiconductor compound.
    According to the invention, the light-emitting diodes are arranged so that: a plurality of N light-emitting diodes, N> 2, are connected in series and able to be forward biased; at least one light-emitting diode is connected in parallel to the plurality of N light-emitting diodes, and capable of being reversed polarized, thus forming a Zener diode; the number N of said light-emitting diodes connected in series being adapted so that the sum of the N threshold voltages is less than the breakdown voltage of the Zener diode.
    Some preferred but non-limiting aspects of this source are the following:
    The Zener diode may comprise a stack of semiconductor portions, of which a first portion doped according to a first type of conductivity, a second portion doped according to a second type of conductivity opposite to the first type, and a first intermediate portion doped according to the first type of conductivity, located between said first and second doped portions, having a doping level adapted so that the breakdown voltage (Vc) is greater than the sum of the N threshold voltages (Vs).
    The light-emitting diodes may comprise a stack of semiconductor portions, of which a first portion doped according to the first type of conductivity, a second portion doped according to the second type of conductivity, and a first intermediate portion doped according to the first type of conductivity, located between said first and second doped portions, said semiconductor portions of the light emitting diodes and the Zener diode being respectively coplanar and made of a material of the same composition and the same level of doping.
    The first doped intermediate portions of the light-emitting diodes and the Zener diode may have a thickness of less than or equal to 5 nm, and preferably between 1 nm and 5 nm.
    The Zener diode may comprise a second intermediate portion doped according to the second type of conductivity, located between the first doped intermediate portion and the second doped portion, having a doping level adapted so that the breakdown voltage is greater than the sum of the N threshold voltages.
    The light-emitting diodes may comprise a second intermediate portion doped according to the second type of conductivity, located between the first doped intermediate portion and the second doped portion, the said second doped intermediate portions of the light-emitting diodes and the Zener diode being substantially coplanar and made respectively. a material of the same composition and the same level of doping, and having a thickness less than or equal to 50 nm, and preferably between 1 nm and 50 nm.
    Said semiconductor compound may be selected from a III-V compound, a II-VI compound, and an IV element or compound.
    Said light-emitting diodes and the Zener diode may each have a stack of semiconductor portions comprising a first doped portion according to a first conductivity type, an active zone, and a second doped portion according to a second type of conductivity opposite to the first type, said stacks forming each a mesa structure substantially coplanar.
    The first doped portion of the light emitting diodes and that of the Zener diode may have a lateral flank having a step surface formed by a second portion of the first doped portion vis-à-vis a first portion thereof.
    A lateral electrical connection element may extend at a light emitting diode or Zener diode so as to be in electrical contact with the recess surface of the corresponding first doped portion, the lateral connection element being further electrically isolated from the second doped portions and active portions of the diode considered and the light emitting diode or the adjacent Zener diode, by dielectric portions covering lateral flanks of the mesa structures. The invention also relates to a method for producing an optoelectronic device according to any one of the preceding characteristics, in which: i) light-emitting diodes made of a material comprising mainly the same semiconductor compound are formed, ii) connected in series a plurality of N light-emitting diodes, N> 2, these being able to be polarized live; iii) at least one light-emitting diode is connected in parallel to said plurality of N light-emitting diodes, so as to be reverse-biased thereby forming a Zener diode, the number N of said series-connected light-emitting diodes being adapted so that the sum of the N threshold voltages is lower than the breakdown voltage of the Zener diode. Step i) can comprise the substeps in which: a. a layer stack comprising a first doped semiconductor layer and a second doped semiconductor layer between which an active layer is interposed; b. the stack of layers is etched to form a mesa structure for forming a plurality of N light emitting diodes and a mesa structure for forming at least one zener diode, each mesa structure being formed of a stack of a first portion doped, an active area and a second doped portion, the first doped portion of said mesa structures having a side flank having a recess surface; vs. dielectric portions covering the lateral flanks of the mesa structures are produced with the exception of the offset surfaces; d. an electrically conductive material is deposited between the mesa structures, the conductive material being in contact with the step-off surface of the first doped portion and electrically isolated by dielectric portions of the active zone and the second doped portion.
    It is also possible, in step a), to carry out a first doped intermediate layer according to the first conductivity type, located between the active layer and the second doped layer, and preferably a second doped intermediate layer according to the second type of conductivity, located between the first intermediate layer and the second doped layer.
    It is possible to adjust the doping level of the first intermediate layer and possibly that of the second doped intermediate layer so that the breakdown voltage of the Zener diode is less than the sum of the N threshold voltages.
    Electrical connection elements adapted to direct polarization of the plurality of N light-emitting diodes and reversing the Zener diode from electrically-conductive polarization portions located opposite the second doped portions can be produced.
    BRIEF DESCRIPTION OF THE DRAWINGS Other aspects, objects, advantages and characteristics of the invention will appear better on reading the following detailed description of preferred embodiments thereof, given by way of non-limiting example, and made in reference to the accompanying drawings, in which: FIG. 1 illustrates an equivalent electrical diagram of an optoelectronic device comprising a plurality of light-emitting diodes connected in series, the diodes being regulated in voltage by two Zener diodes connected head to tail; FIG. 2 is a schematic sectional view of an optoelectronic device according to an embodiment, in which the light emitting diodes and the Zener diode each have a mesa coplanar structure; FIG. 3 is a detailed schematic view of the stack of semiconductor portions of a light emitting diode and the Zener diode of an optoelectronic device according to a variant of the embodiment illustrated in FIG. 2, comprising doped intermediate portions situated between the active zone and the second doped portion; FIG. 4 is a schematic sectional view of an optoelectronic device according to another embodiment, in which the connection between the optoelectronic chip and the control chip is provided by electrically conductive balls; Figures 5a to 5h illustrate the steps of a method of producing an optoelectronic device according to one embodiment.
    DETAILED PRESENTATION OF PARTICULAR EMBODIMENTS
    In the figures and in the remainder of the description, the same references represent identical or similar elements. In addition, the various elements are not represented on the scale so as to favor the clarity of the figures. In addition, the terms "substantially", "approximately", "approximately" are "within 10%". The invention relates to the so-called ESD (Electrostatic Discharge) protection of a plurality of light-emitting diodes connected in series with respect to electrostatic discharges or abnormally high voltages capable of irreversibly damaging the structure of the diodes. emitting.
    The ESD protection is provided by at least one diode connected in parallel with the plurality of light-emitting diodes and arranged to be reverse-biased to the plurality of light-emitting diodes. This diode is then voltage regulator and is subsequently called Zener diode.
    Each light-emitting diode has, when it is forward biased, a so-called threshold voltage Vs from which the diode emits light radiation. The same diode presents, then polarized in reverse, a so-called breakdown voltage Vc, also called Zener voltage, from which the diode goes from a so-called blocking state in which the electric current does not circulate substantially (with a leakage current ) a so-called conductive state in which the electrical resistance of the diode is very low.
    The breakdown voltage Vc may be associated with a zener effect or an avalanche effect. The passing state of the Zener diode is effective when the reverse voltage value is between a minimum value substantially equal to the breakdown voltage Vc and a maximum value beyond which the corresponding electric current is likely to cause degradation. irreversible of the structure of the diode.
    FIG. 1 is an example of an equivalent electrical diagram of an optoelectronic device according to one embodiment, in which a Zener diode provides electrical regulation of a plurality of N light-emitting diodes, N> 2, connected in series.
    The optoelectronic device comprises light-emitting diodes, each having a threshold forward voltage Vs and a reverse breakdown voltage Vc, made of a material comprising predominantly the same semiconductor compound. By material comprising predominantly the same semiconductor compound is meant a material of which at least 50% of its volume is formed or comprises said semiconductor compound.
    The semiconductor compound is chosen from the compounds III-V, that is to say mainly comprising at least one element of column III and an element of column V of the periodic table, the compounds II-VI, and the elements or compounds IV. The compound III-V may be a III-N compound, such as, for example, GaN, InGaN, AIGaN, AlN, InN or AUnGaN. Column V elements, such as arsenic or phosphorus, may be present in an InP or InGaAs type compound. Compound II-VI may be, for example, ZnO, CdTe or CdHgTe. The compound IV may be, for example, SiC, diamond (C), SiGe, GeSn or SiGeSn.
    Thus, because the light-emitting diodes are made of a material predominantly comprising the same semiconductor compound, they all have a substantially identical value of threshold voltage Vs and a substantially identical value of breakdown voltage Vc.
    It appears that the light-emitting diodes made of a material mainly comprising such a semiconductor compound have a reverse breakdown voltage greater than at least twice the forward threshold voltage. For example, the publication of Chang et al. Improved ESD Protection by Combining InGaN-GaN MQW LEDs With GaN Schottky Diodes, IEEE Electron Device Letters, Vol.24, No.3, 2003, 129-131, discloses a GaN-based light-emitting diode whose reverse breakdown voltage is about 170V while the threshold forward voltage is of the order of 3V to 5V.
    It is then possible to use one of the reverse-biased light-emitting diodes, thus forming a Zener diode which provides electrical regulation of a plurality of light-emitting diodes connected in series. Thus, the light-emitting diodes of the optoelectronic device are arranged to form, on the one hand, a plurality of N light-emitting diodes 40 1, 40 2, 40 n connected in series, N 2, and on the other hand, at least a light emitting diode connected in parallel to said plurality of light emitting diodes, and arranged to be reverse biased, thereby forming the Zener diode.
    In addition, the number N of light-emitting diodes connected in series is then adapted such that the sum of the N direct threshold voltages is less than the breakdown voltage Vc of the Zener diode:
    Preferably, the number N of light-emitting diodes is also adapted so that the breakdown voltage is less than 2 times, preferably 1.5 times and more preferably 1.25 times the sum of the N direct threshold voltages. The ESD protection of the light-emitting diodes connected in series is then improved.
    Thus, in operation, a bias voltage is applied to the plurality of light-emitting diodes with a lower value Vp (in absolute value) than the breakdown voltage Vc so that the Zener diode is in the state blocked, and on the other hand greater than the sum of the N threshold voltages so that the light emitting diodes emit light radiation.
    When an electrostatic discharge occurs, the voltage then has a value greater than the sum of the N threshold voltages but also greater than the breakdown voltage. The Zener diode then goes from the off state to the on state, which makes it possible to prevent the electric current from passing through the light-emitting diodes and causes an irreversible degradation of their structure.
    In this example, the Zener diode 50 is connected in series and head-to-tail with a second Zener diode 50 'so as to provide electrical regulation regardless of the sign of the electrostatic discharge voltage. By connection head to tail means that the two zener diodes are connected in series at their respective anode (as illustrated) or at their respective cathode. By way of example, the light-emitting diodes and the Zener diode are made of a material comprising mainly the GaN compound and have the same threshold forward voltage value, equal to about 3V, and the same reverse breakdown voltage value, equal to at about 170V. The optoelectronic device may thus comprise, in parallel with the Zener diode, between 29 and 57 electroluminescent diodes approximately connected in series, and preferably between 37 and 57 light-emitting diodes, and more preferably between 45 and 57 light-emitting diodes, for example 50 light emitting diodes.
    FIG. 2 is a schematic partial sectional view of an optoelectronic device according to an embodiment, here comprising three light-emitting diodes (purely illustrative) connected in series and regulated in voltage by a Zener diode in parallel.
    A three-dimensional orthonormal reference (Χ, Υ, Ζ) is defined here and for the rest of the description, in which the plane (X, Y) is substantially parallel to the plane of the emission surfaces of the light-emitting diodes, and where the Z axis is oriented in a direction orthogonal to the emission surfaces.
    The optoelectronic device 1 comprises here: a first printed circuit chip 10, called an optoelectronic chip, comprising a plurality of light-emitting diodes 40 connected in series, and at least one Zener diode 50 disposed here adjacent to one of the light-emitting diodes. The optoelectronic chip 10 here comprises a matrix of light-emitting diodes 40 defining a matrix of light pixels, a second printed circuit chip 20, called a control chip, disposed on a so-called rear face 11b of the optoelectronic chip 10. The control chip 20 comprises connection elements for biasing the light-emitting diodes 40 and the Zener diode 50. a cover 30, disposed on a so-called front face 11a of the optoelectronic chip 10, opposite the rear face 11b.
    The optoelectronic chip 10 comprises a plurality of light-emitting diodes 40 connected in series, and at least one Zener diode 50 connected in parallel with the plurality of diodes 40. Each of the diodes 40, 50 is formed of a stack of semiconductor portions each comprising in majority the same semiconductor compound. The diodes 40, 50 thus comprise a first doped portion of a first conductivity type and a second doped portion of a second conductivity type between which there is an active zone. The active zone is the region of a light-emitting diode from which a light radiation is mainly emitted.
    The light-emitting diodes 40 and the Zener diode 50 form mesa structures substantially coplanar with each other. Mesa structure means a structure formed of a stack of semiconductor portions whose active area is projecting above a growth substrate following an etching step. The structure of the light emitting diodes and the Zener diode may be the same as or similar to the structure described in Fan et al. Entitled Ill-Nitride Micro-emitter Arroys Development and Applications, J. Phys. D: Appl. Phys. 41 (2008) 094001. Alternatively, as illustrated in Figure 2, it may be identical or similar to the structure described in the patent application FR1456085 filed on 27/06/2014 whose text is considered to be an integral part of the this description. The mesa structures are substantially coplanar in the sense that the semiconductor portions of the light emitting diodes and those of the Zener diode are mutually coplanar.
    Each light-emitting diode 40 comprises a stack formed of a first portion 41 doped with a first type of conductivity, for example of N type, and of a second portion 42 doped with a second type of conductivity opposite to the first type, by example of type P between which is interposed an active zone 43 said emissive at which is generated the light radiation of the diode. A face of the first N-doped portion 41, opposite to the active zone 43, forms a transmission surface 44 through which the light radiation is emitted.
    The Zener diode 50 comprises a stack formed of a first portion 51 doped with a first type of conductivity, for example of N type, and a second portion 52 doped with a second type of conductivity opposite to the first type, by P-type example, between which is interspersed an active zone 53. A face 54 of the first N-doped portion 51, opposite to the active zone 53, is substantially coplanar with the emission surfaces 44.
    In this example, each semiconductor portion 41, 42, 43 of the light-emitting diodes 40 is respectively coplanar with that 51, 52, 53 of the Zener diode 50, and have a substantially identical thickness and composition. More precisely, the first N-doped portions 41 of the light-emitting diodes 40 are coplanar with that 51 of the Zener diode 50, and have a substantially identical thickness and composition. By material of the same composition is meant a material comprising a semiconductor compound whose elements have a substantially identical atomic proportion. The doping level is preferably also substantially identical. It is the same for the second portions 42, 52 doped P and for the active areas 43, 53. Thus, the thicknesses of the light emitting diodes and zener diodes are substantially identical. Moreover, the emission surface 44 and the surface 54 are substantially coplanar. Each light-emitting diode 40 and diode
    Zener 50 further comprises an electrically conductive portion 45, 55 in contact with a face of the second portion 42, 52 doped opposite to the active zone 43, 53. The thickness of the conductive portion 45, 55 may be between 3 nm and 500nm. The conductive portions 45, 55 are preferably substantially coplanar.
    Each light-emitting diode 40 and Zener diode 50 here has a structuring of the first N-doped portion 41, 51 forming a recess at a side edge of the stack resulting in a local enlargement of the lateral dimensions in the plane (X, Y). More specifically, each first portion 41, 51 doped N comprises a first portion 41a, 51a, located between the active zone 43, 53 and a second portion 41b, 51b, whose lateral dimensions are substantially identical to those of the active zone 43, 53. It also comprises a second portion 41b, 51b, the face opposite the first portion 41a, 51a forms the surfaces 44, 54, whose lateral dimensions are greater than those of the first portion 41a, 51a at a lateral flank of the stack. Thus, the first N-doped portion 41, 51 of the diodes 40, 50 has a recess surface 46, 56 which extends substantially orthogonal to the Z axis and which connects the lateral flanks of the first portions 41a, 51a and second Parts 41b, 51b. Furthermore, the active zone 43, 53 and the second portion 42, 52 doped P diodes 40, 50 have lateral flanks which extend continuously along the axis Z. The lateral dimensions of the second portion 41b, 51b of the first portion 41, 51 doped N is at least 1% greater than those of the first portion 41a, 51a. For example, for a width of the first portion 41a, 51a of the N doped portion of 80pm, the width of the second portion 41b, 51b may be 85pm.
    The light-emitting diodes 40 and Zener diode 50 may have a thickness of between 100 nm and 50 μm, the thickness of the first portion 41, 51 doped N may be between 50 nm and 20 μm, that of the active zone 43, 53 may be between 10nm and 500nm, and that of the second portion 42, 52 doped P can be between 50nm and 20pm. The lateral dimensions of the diodes, measured at the surfaces 44, 54, may be between 500 nm and a few millimeters, depending on the intended applications. Preferably, the lateral dimensions of the light-emitting diodes are substantially identical to those of the Zener diode.
    The light-emitting diodes and Zener diode are here made of a material comprising mainly the GaN compound. The active zones may comprise at least one quantum well made based on a semiconductor compound having a band gap energy lower than that of the doped portions. For example, the doped portions are made of GaN and the active zone comprises an alternation of intrinsic (unintentionally doped) GaN semiconductor layers and at least one InGaN-based quantum well. As an illustration, the light-emitting diodes may be adapted to emit blue light, that is to say the emission spectrum of which has a peak intensity of between 440 nm and 490 nm approximately.
    The lateral flanks of the diodes are coated with a dielectric portion 47, 57, with the exception of the recess surfaces 46, 56. More specifically, the lateral flanks having no recess are covered in a continuous manner with a dielectric portion 47 , 57. The lateral flanks comprising a recess are coated with a dielectric portion in two parts: a first portion 47a, 57a which covers the lateral flanks of the portion 42, 52 doped P, the active zone 43, 53 and the first portion 41a, 51a of the N-doped portion 41, 51; and a second portion 47b, 57b, distinct from the first, which covers the lateral flanks of the second part 41b, 51b of the portion 41, 51 doped N. Thus, the recess surfaces 46, 56 are not coated with a dielectric portion 47, 57. The dielectric portion 47, 57 further covers the lateral flanks of the conductive portion 45, 55.
    The optoelectronic chip further comprises elements 48, 58 of electrical connection, called lateral, interposed between the electroluminescent diodes 40 and Zener diode 50, adapted to bring to an electric potential respectively the first portion 41, 51 doped N. In this example, the lateral connection elements 48 extend between a dielectric layer 12 and an electrical connection layer 13. Each light-emitting diode 40 thus comprises a lateral connection element 48 which extends between the dielectric portion 47a, 47b situated at the step 46 on the one hand, and the dielectric portion 47 or 57 of the diode opposite. The lateral connection element 48 is thus electrically isolated from the active areas 43, 53 and the second portions 42, 52 doped P of the light-emitting diodes 40 and the Zener diode 50. It is nevertheless in electrical contact with the first portion 41 doped N of the corresponding light emitting diode 40 at the step surface 46, so as to bring the first N-doped portion 41 to a given electrical potential.
    Similarly, each Zener diode 50 has a so-called lateral connection element 58 adapted to carry the first N-doped portion 51 at a given electrical potential. It extends between the dielectric portion 57a, 57b located at the recess 56 on the one hand, and the dielectric portion 47 of a light-emitting diode 40 opposite. The lateral connection element 58 is thus electrically isolated from the active zones 43, 53 and the second portions 42, 52 doped P. It is however in electrical contact with the first N-doped portion 51 of the Zener diode at the surface of the recess 56, so as to bring this first N-doped portion 51 to a given electrical potential.
    The lateral connection elements 48, 58 are electrically isolated from the conductive portions 45, 55 by the dielectric portions 47, 57. The thickness and the material of the dielectric portions 47, 57 are chosen so as to obtain an acceptable leakage current between the conductive portion and the lateral connection elements. The thickness may be of the order of a few nanometers, for example between 3 nm and 5 nm depending on the dielectric material used.
    In this example, the optoelectronic device may comprise a dielectric layer 12 interposed between the light-emitting diodes 40 and zener diode 50 on the one hand and the cover 30 on the other hand. It is made of a dielectric material, for example S13N4, so as to avoid any short circuit between the diodes 40, 50 and the corresponding lateral connection elements 48, 58, and can improve the light extraction. The thickness of the dielectric layer 12 is for example between 500nm and 50pm, preferably between Ιμιτι and 5pm. It has a front face and an opposite rear face. The light-emitting diodes 40 and the Zener diode 50 are in contact with the rear face of the dielectric layer 12 at the respective surfaces 44, 54. The front face may have raised patterns (not shown) located opposite the emission surfaces 44 so as to improve the extraction of the light radiation emitted by the light-emitting diodes 40.
    The optoelectronic device may further comprise an electrical connection layer 13 interposed between the diodes 40, 50 and the control chip 20, facilitating the electrical connection between the optoelectronic chip and the control chip. The connection layer 13 thus comprises electrical connection elements 14 ensuring the connection between the lateral connection elements 48, 58 with conductive portions of the control chip. The connection elements 14 are electrically isolated from each other by a dielectric material 15. The coupling layer 13 has a substantially constant thickness, a face opposite to the diodes 40, 50 forms the rear face 11b of the optoelectronic chip.
    The electrical connection elements 14 here provide the series connection of the light emitting diodes 40 and the connection in parallel thereof with the Zener diode 50, and allow the application of given electrical potentials. For this: an element 14i is in electrical contact with the conductive portion 45 of a first light-emitting diode 40i so as to be able to apply a positive electrical potential, noted here V +, to the corresponding anode 42; elements 142 ensure the series connection of the light-emitting diodes 40i, 4Ο2, 403, and thus connect the cathode 41 of an upstream diode 40 to the anode 42 of the downstream diode 40. For this, they are in electrical contact with the element 48 of the upstream diode 40 and with the conductive portion 45 of the diode 40 downstream; - An element M3 is in electrical contact with the element 48 of the last light-emitting diode 4Ο3 so as to apply a negative electric potential, noted here V-, to the corresponding cathode 41. Advantageously, this same element M3 is also in contact with the conductive portion 55 of the Zener diode 50 so as to apply the same electrical potential to the anode 52 of the Zener diode; - Finally, an element 144 is in electrical contact with the element 58 of the Zener diode 50 so as to be able to apply the same electrical potential V + to the cathode 51.
    The optoelectronic light emitting device further comprises a control chip 20 connected to the optoelectronic chip 10 at the rear face 11b. The control chip provides the electrical polarization of the diodes 40,50. Thus, the conductive portions 22 ensure the direct polarization of the light-emitting diodes 40 and the indirect polarization of the Zener diode 50. More specifically, a positive electrical potential V + is applied to the anode 42 of the first light-emitting diode 40i by the electroluminescent diode 40. intermediate of the connection element 14i and a negative electric potential V- is applied to the cathode 41 of the last light-emitting diode 403 via the connection element 143. In addition, the same negative potential V- is applied at the anode 52 of the Zener diode 50 by the connection element M3 and the same positive potential V + is applied to the cathode 51 of the Zener diode 50 by the connection element 144. The light-emitting diodes connected in series are therefore polarized in direct and the Zener diode is polarized in reverse.
    The control chip may also comprise the electronic elements, of the transistor type, providing emission control of the light-emitting diodes. Alternatively, it may be a passive component comprising essentially only electrical connection lines of the conductive portions to remote electronic elements.
    The optoelectronic device also comprises a cover 30 formed here of a plate made of a material that is transparent with respect to the spectral range of the light radiation emitted by the light-emitting diodes. The transparent plate here covers the front face of the dielectric layer.
    Thus, an optoelectronic device is obtained whose plurality of light-emitting diodes connected in series is protected against electrostatic discharges by at least one diode forming a Zener diode mainly comprising the same semiconductor compound. There is therefore an optoelectronic device with integrated protection, the number of Zener diodes necessary to ensure the ESD protection of the light emitting diodes is decreased compared to that of the example of the prior art mentioned above.
    In addition, the mesa coplanar structuring with recess of the light-emitting diodes and the Zener diode makes it possible to obtain a high density of diodes, with lateral dimensions of the diodes possibly being of the order of 10 μm to 50 μm. The electrical connection of the diodes is also facilitated, while ensuring good electrical insulation between the electrical connection elements.
    Finally, the optoelectronic device comprises light-emitting diodes and at least one zener diode integrated monolithically, which can be obtained simultaneously by a manufacturing method as detailed below.
    FIG. 3 is a detailed diagrammatic sectional view of a light-emitting diode and a Zener diode of an optoelectronic device according to a variant of the embodiment described above.
    In this example, the control chip 20 and the cover 30 (not shown) are identical or similar to those described with reference to FIG. 2. The light-emitting diodes 40 and the Zener diodes 50 have a similar coplanar mesa structure to that described in FIG. FIG. 2. The stack of semiconductor portions of the Zener diode is adapted to be able to adjust the value of the reverse breakdown voltage. For this purpose, the Zener diode 50 comprises a first intermediate portion 3 doped according to the conductivity type of the first doped portion 51, for example of N type, situated between the active zone 53 and the second doped portion 52, and made of a material mainly comprising the same semiconductor compound as that of the diodes.
    By adjusting the doping of the first doped intermediate portion 3, it is thus possible to modify the value of the reverse breakdown voltage, in particular as a function of the number N of light-emitting diodes that it is desired to connect in series. By way of example, for a GaN-based Zener diode comprising a first N-doped portion 51 and a second P-doped portion 52, both portions having a doping level of the order of 1019 cm. 3, whose active zone 53 comprises multiple InGaN quantum wells interposed between intrinsic (unintentionally doped) GaN barrier layers, the first N-doped intermediate portion 3, here made of GaN, has an Nd doping level leading to a Vc breakdown voltage value indicated in the table below:
    It is then possible to connect in series a number N of light-emitting diodes as a function of the value obtained from the breakdown voltage of the Zener diode.
    In addition, when the first N-doped intermediate portion 3 has an average thickness, measured in the Z direction, of less than about 5 nm, and preferably between 1 nm and 5 nm, the doping level Nd does not substantially modify the optoelectronic behavior of the Zener diode 50 live. Thus, the value Vs of the forward threshold voltage remains substantially constant at a value of 3.2V here and the maximum internal quantum efficiency also remains substantially constant at a value of 70% here. This is all the more advantageous when, as illustrated in FIG. 3, the first N-doped intermediate portion 3 is also present in each of the light-emitting diodes 40 connected in series, the first intermediate portions 3 then being coplanar and made of a material of the same composition and the same level of doping.
    Furthermore, the Zener diode may furthermore comprise a second intermediate portion 4 doped according to the same type of conductivity as that of the second doped portion 52, for example of the P type. The second intermediate P-doped portion 4 is situated between the second portion 52 doped P and the first intermediate portion 3 doped N. By adjusting the level
    Na doping of the second P-doped intermediate portion 4, it is also possible to modify the value of the reverse breakdown voltage. By way of example, for a GaN-based Zener diode comprising a first N-doped portion 51 and a second P-doped portion 52, both portions having a doping level of the order of 1019 cm. 3, whose active zone 53 comprises multiple quantum wells of InGaN interposed between intrinsic (unintentionally doped) GaN barrier layers, the first intermediate portion 3 being made of N-doped GaN with a doping level Nd of the order of 1019 cm 3, the second intermediate portion 4, here made of GaN, having a doping level Na, a value Vc of breakdown voltage of the Zener diode indicated in the table below is obtained:
    It is then possible to connect in series a number N of light-emitting diodes as a function of the value obtained from the breakdown voltage of the Zener diode.
    In addition, when the second P-doped intermediate portion 4 has an average thickness, measured in the Z direction, of less than about 50 nm, and preferably between 1 nm and 50 nm, the doping level Na does not substantially modify the optoelectronic behavior of the Zener diode 50 live. Thus, the value Vs of the forward threshold voltage remains substantially constant at a value of 3.2V here and the maximum internal quantum efficiency also remains substantially constant at a value of 70% here. This is all the more advantageous when, as illustrated in FIG. 3, the second P-doped intermediate portion 4 is also present in each of the light-emitting diodes 40 connected in series, the second intermediate portions 4 then being coplanar and made of a material of the same composition and the same level of doping.
    The doping level of the first and second doped intermediate portions 3, 4 may be homogeneous within the portions or may have a doping gradient. In this case, the
    doping level indicated above corresponds to the average doping level within each of the portions 3, 4. The stack of semiconductor portions of the Zener diode and the light emitting diodes may comprise an electron blocking portion located between the active zone 43. , 53 and the second doped portion 42, 52, and preferably between the doped intermediate layers 3, 4 and the second doped portion 42, 52. The electron blocking portion may be formed of a material comprising predominantly the same semiconductor compound diodes 40, 50. It makes it possible to increase the rate of radiative recombinations within the active zone. In the case of GaN-based diodes 40, 50, the electron blocking portion may be made of AlGaN, preferably with an atomic proportion of aluminum of between 10% and 20% approximately. Advantageously, the first intermediate portion 3 and preferably also the second intermediate portion 4 may be made of AIGaN, so as to further ensure the electron blocking function.
    Finally, as an alternative to the use of the doped intermediate portions 3, 4, the modification of the doping levels of the second doped portion 52 also makes it possible to adjust the value of the breakdown voltage, when it is doped at a specific level. sufficient and N type the active area 53, for example of the order of 5.1018 cm 3. However, when the doped portions 41, 42 and the active zone 43 of the light-emitting diodes have such a level of doping, identical to the modified doping level of the portions 51, 52, 53 of the Zener diode, the internal quantum efficiency has a diminished value. .
    FIG. 4 is a schematic partial sectional view of an optoelectronic device according to another embodiment, in which the electrical connection between the control chip and the optoelectronic chip is achieved by electrically conductive balls 23, 24 and not at the means of the electrical connection layer and the electrical connection elements. The space delimited between the optoelectronic chip and the control chip can be filled with a dielectric material (not shown) and preferably thermally conductive. In this example, the lateral flanks of the diodes 40, 50 are not necessarily covered by dielectric portions 47, 57 illustrated in FIGS. 2 and 3.
    FIGS. 5a to 5h illustrate steps of a method for producing an optoelectronic device as represented in FIG. 2. This example is similar to that described in patent application FR1456085 filed on 27/06/2014, the text of which is considered an integral part of this description.
    With reference to FIG. 5a, a stack formed of a semiconductor layer 61 doped with a first type of conductivity, for example of N type, of an active layer 63 comprising at least one type, is produced on a growth substrate 60. quantum well, a first N-doped intermediate layer 3 (and optionally a second P-doped intermediate layer 4, not shown), and a doped semiconductor layer 62 according to a second conductivity type opposite to the first type, for example of the type Next, the free surface of the P-doped layer 62 is coated with an electrically conductive layer 65, for example made of aluminum or silver. These stacked layers are intended to form the first N-doped portions 41, 51, the active zones 43, 53, the first N-doped intermediate portions 3 and the second P-doped portions 42, 52 of the light-emitting diodes and the Zener diode, as well as the conductive portions 45, 55. Note that the N-doped layer 61 may comprise a first substantially N + doped portion covering the substrate and a second portion covering the first, and having a lower doping level. The two parts of the N-doped layer 61 may be made of the same material or of two different materials mainly comprising the same semiconductor compound. Furthermore, the growth substrate may be an insulating material, for example sapphire, or a semiconductor material, for example silicon, or based on a III-V or II-VI material.
    Structured studs 64 of hard mask are then deposited. The pads 64 have a structure forming a recess 64a at a lateral flank. Thus, each stud 64 has a first portion 64b, forming a base which rests on the conductive layer 65, the lateral dimensions of which subsequently define those of the second portion 41b, 51b of the N-doped portions 41, 51 of the diodes 40, 50. comprises a second portion 64c, which extends from the first portion 64b, the lateral dimensions of which subsequently define those of the first portion 41a, 51a of the N-doped portions of the active zone 43, 53 and of the portion 42, 52 doped P diodes. The thicknesses of the two parts of the hard masks are chosen as a function of the etching speed of the different materials of the stack of layers.
    With reference to FIG. 5b, etching of the stack of the conductive layer 65, of the P-doped layer 62, of the N-doped intermediate layer 3, of the active layer 63, and of part of the layer is carried out. 61 doped N, from the exposed surface of the stack between the pads 64 hard mask. The portion 64a forming step of the hard mask pads is also etched during this step. The etching is a dry etching, such as reactive ion etching or plasma etching.
    With reference to FIG. 5c, etching is continued from the exposed surface of the stack not covered by the hard mask pads 64. Thus, a plurality of mesa coplanar structures each formed of a stack of a conductive portion 45, 55, of a P-doped portion 42, of an N-doped intermediate portion 3, of an active zone 43 is obtained. , 53, and an N-doped portion 41, 51 having a recess 46, 56 between a first portion 41a, 51a in contact with the active zone and a second portion 41b, 51b covering the substrate 60. The first part 41a, 51a of the N-doped portion has lateral dimensions in the plane (X, Y) smaller than those of the second part 41b, 51b so as to form the recess surface 46, 56. Preferably, the mesa structures intended to form diodes electroluminescent devices have lateral dimensions greater than those of adjacent mesa structures intended to form Zener diodes, so as to maximize the total emission area of the optoelectronic device 1. The conductive portions have a s exposed surface, that is to say free of any hard mask residue.
    With reference to FIG. 5d, the insulating portions 47, 57 arranged in the spaces between the mesa structures and covering the lateral flanks thereof, with the exception of the recess surfaces 46, 56 are produced. The insulating portions may be obtained by a conformal deposition of a layer of a dielectric material, for example SiN having a thickness of between 3 nm and 100 nm, continuously covering the mesa structures and the exposed surface of the substrate. Only the portions located on the lateral flanks of the mesa structures are then preserved by dry etching the portions of the dielectric layer situated between the mesa structures, on the recess surfaces and on the face of the conductive portions.
    Optionally, conventional lithography, etching and deposition steps, such as cathodic sputtering or chemical vapor deposition, can be carried out using a film (not shown) of a reflective material which is with respect to the excitation wavelength, for example in aluminum or in silver, covering the exposed surface of the insulating portions 47 covering the lateral flanks of the mesa structures intended to form light-emitting diodes 40, of a thickness for example less than 50nm for aluminum and less than 75nm for other suitable materials such as silver. Dry etching is optionally performed to expose the surface of the conductive portions again, and to electrically insulate the conductive portions of the reflective or absorbent films by the insulating portions. In the case where the reflective films are electrically conductive, they can cover the corresponding recess surfaces.
    With reference to FIG. 5e, the lateral connection elements 48, 58 are formed by filling the space between the mesa structures. For this, a full plate deposition of an electrically conductive material is carried out, followed by a chemical mechanical planarization and / or etching, for example an RIE etching, so as to remove the deposited conductive material covering the mesa structures. and thus make free the upper face of the conductive portions 45, 55 and that of the insulating portions 47, 57. The upper face obtained is then substantially flat.
    With reference to FIG. 5f, an electrical connection layer 13 is made covering the upper face of the structure obtained at the end of the preceding step, the coupling layer is formed of a dielectric material surrounding connection elements. 14 (here referenced 14i, 142, 143, M4) which extend between the two opposite faces of the layer 13 and come into contact with the conductive portions 45, 55 and lateral connection elements 48, 58. For this, a dielectric layer is deposited on the structure obtained, then by lithography and etching, cavities are defined to receive the connection elements. These cavities are then filled by a full-plate deposit of an electrically conductive material, for example copper or aluminum, followed by a chemical-mechanical planarization. The coupling layer 13 has a substantially flat free face adapted to a gluing for example direct with a control chip.
    With reference to FIG. 5g, the previously obtained structure is fixed to a control chip 20 at the free surface of the coupling layer 13. The control chip comprises electrically conductive portions 22 of polarization (here referenced 22i, 223 , 224) coming into contact with the connecting elements 14ι, M3, ΙΛ4 of the coupling layer 13. The fixing can in particular be ensured by a direct bonding, or bonding by molecular adhesion, between the respective metal surfaces of the optoelectronic chip and of the control chip, as well as between the respective dielectric surfaces of the two chips. Alternatively, attachment by electrical connection microbeads and / or thermocompression can also be performed.
    With reference to FIG. 5h, the growth substrate 60 is removed, for example by mechano-chemical planarization and / or dry etching, so as to expose the upper face of the optoelectronic chip comprising the surfaces 44, 54 of the diodes 40, 50.
    The upper face of the optoelectronic chip is then covered with a layer 12 of a dielectric material which is then planarized, for example mechanochemically. The free face of the layer 12 may be locally structured so as to form relief patterns arranged facing the emission surfaces 44 and possibly the surfaces 54. Finally, a cover 30 is fixed, formed of a plate made of a material transparent, on the front of the optoelectronic chip.
    The production method described here thus makes it possible to obtain an optoelectronic device in which the light-emitting diodes and the Zener diode (s) are monolithically integrated and obtained simultaneously.
    Specific embodiments have just been described. Various variations and modifications will occur to those skilled in the art.
    Thus, the embodiments described above mention a first N doped portion having a step surface and a doped portion P located opposite the control chip. The conductivity types of the doped portions can of course be reversed.
    The optoelectronic device may also comprise several sets of light-emitting diodes connected in series, each set of which is connected by a Zener diode or a pair of Zener diodes connected head-to-tail. The number N of each set of light-emitting diodes connected in series is adapted as a function of the value of the slap voltage of the corresponding Zener diode, this value being adjustable by the doped intermediate portion or portions 3, 4.
    权利要求:
    Claims (15)
    [1" id="c-fr-0001]
    An optoelectronic device (1) comprising: light-emitting diodes (40) each having a so-called threshold forward voltage (Vs) and a reverse breakdown voltage (Vc), made of a material comprising in majority the same semiconductor compound, characterized in they are arranged so that: - a plurality of N light-emitting diodes (40), N> 2, are connected in series and able to be forward biased; at least one light-emitting diode (50) is connected in parallel to the plurality of N light-emitting diodes (40) and is capable of being polarized in reverse, thus forming a Zener diode; the number N of said light-emitting diodes (40) connected in series being adapted so that the sum of the N threshold voltages (Vs) is less than the breakdown voltage (Vc) of the Zener diode (50).
    [2" id="c-fr-0002]
    2. Optoelectronic device (1) according to claim 1, wherein the Zener diode (50) comprises a stack of semiconductor portions, a first portion (51) doped according to a first conductivity type, a second portion (52) doped according to a second type of conductivity opposite to the first type, and a first intermediate portion (3) doped according to the first conductivity type, located between said first and second doped portions (51, 52), having a doping level adapted so that the breakdown voltage (Vc) is greater than the sum of the N threshold voltages (Vs).
    [3" id="c-fr-0003]
    Optoelectronic device (1) according to claim 2, wherein the light-emitting diodes comprise a stack of semiconductor portions, a first portion (41) doped according to the first type of conductivity, a second portion (42) doped according to the second type of conductivity, as well as a first intermediate portion (3) doped according to the first conductivity type, located between said first and second doped portions (41, 42), said semiconductor portions of the light emitting diodes and the Zener diode being respectively substantially coplanar and made of a material of the same composition and the same level of doping.
    [4" id="c-fr-0004]
    Optoelectronic device (1) according to claim 3, wherein the first doped intermediate portions (3) of the light-emitting diodes (40) and the Zener diode (50) have a thickness of less than or equal to 5 nm, and preferably between lnm and 5nm.
    [5" id="c-fr-0005]
    Optoelectronic device (1) according to any one of claims 2 to 4, wherein the Zener diode comprises a second intermediate portion (4) doped according to the second conductivity type, located between the first intermediate portion (3) doped and the second doped portion (52) having a doping level adapted so that the breakdown voltage (Vc) is greater than the sum of the N threshold voltages (Vs).
    [6" id="c-fr-0006]
    Optoelectronic device (1) according to claim 5, wherein the light-emitting diodes comprises a second intermediate portion (4) doped according to the second conductivity type, located between the first doped intermediate portion (3) and the second doped portion (42). ), said second doped intermediate portions (4) of the light-emitting diodes and of the Zener diode being respectively coplanar and made of a material of the same composition and of the same doping level, and having a thickness of less than or equal to 50 nm, and preferably between 1nm and 50nm.
    [7" id="c-fr-0007]
    An optoelectronic device (1) according to any one of the preceding claims, wherein said semiconductor compound is selected from a III-V compound, a II-VI compound, and an IV element or compound.
    [8" id="c-fr-0008]
    Optoelectronic device (1) according to any one of claims 1 to 7, wherein said light emitting diodes and the Zener diode each have a stack of semiconductor portions comprising a first portion (41, 51) doped according to a first type of conductivity. an active region (43, 53), and a second portion (42, 52) doped in a second conductivity type opposite to the first type, said stacks each forming a substantially coplanar mesa structure.
    [9" id="c-fr-0009]
    9. Optoelectronic device (1) according to claim 8, wherein the first doped portion (41) of the light emitting diodes (40) and that (51) of the Zener diode (50) have a lateral flank having a recess surface (46). , 56) formed by a second portion (41b, 51b) of the first doped portion (41, 51) vis-à-vis a first portion (41a, 51a) thereof.
    [10" id="c-fr-0010]
    Optoelectronic device (1) according to claim 9, wherein a lateral electrical connection element (48, 58) extends at a light-emitting diode or Zener diode so as to be in electrical contact with the surface. of the recess (46, 56) of the corresponding first doped portion (41, 51), the lateral connection element (48, 58) being further electrically isolated from the second doped portions (42, 52) and active portions (43, 51). 53) of the diode (40, 50) in question and the light emitting diode or the adjacent Zener diode by dielectric portions (47, 57) covering lateral flanks of the mesa structures.
    [11" id="c-fr-0011]
    11. A method of producing an optoelectronic device (1) according to any one of the preceding claims, wherein: i) forming light emitting diodes (50) made of a material mainly comprising the same semiconductor compound, ii) connecting in series a plurality of N light-emitting diodes (50), N> 2, these being able to be forward biased; iii) at least one light-emitting diode is connected in parallel with said plurality of N light-emitting diodes so as to be reverse-biased thereby forming a Zener diode, the number N of said series-connected light-emitting diodes (40) being adapted so that the sum of the N threshold voltages (Vs) is less than the breakdown voltage (Vc) of the Zener diode.
    [12" id="c-fr-0012]
    The method of claim 11, wherein step i) comprises the substeps wherein: a. a layer stack comprising a first doped semiconductor layer (61) and a second doped semiconductor layer (62) between which an active layer (63) is interposed; b. the stack of layers is etched to form a mesa structure for forming a plurality of N light-emitting diodes (40) and a mesa structure for forming at least one zener diode (50), each mesa structure being formed of a stacking a first doped portion (41, 51), an active region (43, 53) and a second doped portion (42, 52), the first doped portion (41, 51) of said mesa structures comprising a side flank having a recess surface (46, 56); vs. dielectric portions (47, 57) covering the lateral flanks of the mesa structures are made except for the recess surfaces (46, 56); d. an electrically conductive material (48, 58) is deposited between the mesa structures, the conductive material being in contact with the recess surface (46, 56) of the first doped portion (41, 51) and electrically isolated by dielectric portions ( 47, 57) of the active area (43, 53) and the second doped portion (42, 52).
    [13" id="c-fr-0013]
    13. The method of claim 12, wherein is further carried out, in step a), a first intermediate layer (3) doped according to the first conductivity type, located between the active layer (63) and the second layer. doped (62), and preferably a second intermediate layer (4) doped according to the second conductivity type, located between the first intermediate layer (3) and the second doped layer (62).
    [14" id="c-fr-0014]
    14. The method of claim 13, wherein the doping level of the first intermediate layer (3) and optionally that of the second doped intermediate layer (4) is adjusted so that the breakdown voltage (Vc) of the diode Zener is less than the sum of the N threshold voltages (Vs).
    [15" id="c-fr-0015]
    15. Method according to any one of claims 12 to 14, wherein there is provided electrical connection elements (14) adapted to directly bias the plurality of N light emitting diodes (40) and reverse the Zener diode (50) to from electrically conductive portions (22) of polarization located opposite the second doped portions (42, 52).
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    同族专利:
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    法律状态:
    2016-11-30| PLFP| Fee payment|Year of fee payment: 2 |
    2017-05-26| PLSC| Search report ready|Effective date: 20170526 |
    2017-11-30| PLFP| Fee payment|Year of fee payment: 3 |
    优先权:
    申请号 | 申请日 | 专利标题
    FR1561195A|FR3044167B1|2015-11-20|2015-11-20|OPTOELECTRONIC LIGHT EMITTING DIODE DEVICE COMPRISING AT LEAST ONE ZENER DIODE|
    FR1561195|2015-11-20|FR1561195A| FR3044167B1|2015-11-20|2015-11-20|OPTOELECTRONIC LIGHT EMITTING DIODE DEVICE COMPRISING AT LEAST ONE ZENER DIODE|
    EP16199386.0A| EP3171404B1|2015-11-20|2016-11-17|Optoelectronic device with light-emitting diodes comprising at least one zener diode|
    US15/356,034| US9960152B2|2015-11-20|2016-11-18|Optoelectronic device with light-emitting diodes comprising at least one zener diode|
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